Department of Physics
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Item Understanding the effect of inelastic electron-phonon scattering and channel inhomogeneities on a nanowire FET(Elsevier, 2018-02) Sarkar, NiladriUsing self-consistent Non-Equilibrium Green's Function formalism, the effect of the inelastic scattering due to electron-phonon interaction on the transfer and output characteristics of a coaxially gated generic nanowire field effect transistor has been studied in detail. The scattering strength Do is varied from 0.003 eV2 to 0.3 eV2. There is change in the threshold voltage and suppression of channel current with increasing scattering strength. We also studied the effect of channel inhomogeneities on electron energy. The channel inhomogeneities are invoked by introducing potential step inside the channel. We study the energy relaxation due to inelastic scattering and channel inhomogeneities by comparing the normalized terminal current per energy for the source and drain terminals.Item Understanding the overall shape of the output characteristics from the change in the channel potential profile for nanowire FET(Elsevier, 2017-01) Sarkar, NiladriWe have shown the influence of the changing channel potential profile from its equilibrium profile on the overall shape of the output characteristics of a Nanowire FET which is operating under ballistic regime. The device has a nano-wire channel with an array of lattice points which is the surrounded by a coaxial metallic gate. There is a dielectric which isolates the channel from the metallic gate. The source and the drain electrodes are maintained at different chemical potentials μ1 and μ2 which gives rise to the channel current in the device. The physics and the modeling of this device have been understood in detail by studying the electrostatics of the channel.