Department of Physics

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Subject: search.filters.subject.Dielectric materials

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    Fabrication of novel thin film capacitor based on PVA/ZnO nanocomposites as dielectric material
    (Springer, 2020-11) Nair, Sindhu S.
    A three-layer thin film capacitor was designed and fabricated with PVA/ZnO nanocomposite as dielectric material. Addition of ZnO nanoparticles showed change in dielectric constant, which varied with frequency and weight percentage. ZnO nanoparticles of weight percentage of 0.5% is chosen for the synthesis of nanoparticles with a grain size of 54 nm, using cost-effective and simple co-precipitation method. It is a low-cost method for large-scale production without impurities. The agglomeration was reduced by adding the starch molecules so that the O–H functional groups could hold together to the nanoparticles at the earlier nucleation stage and can be removed when purification by centrifugation is done. Fourier-transform infrared spectroscopy analysis showed peaks due to the O–H groups in the polymer backbone, CH2 asymmetric and symmetric stretching, C–C stretching and Zn–O stretching, respectively, indicating formation of the proper film. From the profilometer, the thickness was calculated as 195.73 nm for the dielectric film. The fabricated device showed capacitance of 210 nF m−2 in par with the theoretical value (254.451 nF m−2) at 298 K.
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    Carbon Nanotube Field Effect Transistor: Basic Characterization and Effect of High Dielectric Material
    (IJRTE, 2009-11) Mishra, Rashmi Ranjan
    As the scaling of Si MOSFET approaches towards its limiting value, new alternatives are coming up to overcome these limitations. Carbon nanotube field effect transistor (CNTFET) is found to be one of the most promising alternatives for bulk Si MOSFET. In this work we have simulated a cylindrical CNTFET. Based on the simulation results both output and transfer characteristic curves are plotted and analyzed. We have also studied the effect of different dielectric materials used as gate insulator.