BITS Faculty Publications
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Item Size quantization effect in the channel of a 2D nano scale dual gate MOSFET(AIP, 2020-05) Sarkar, NiladriIn this work, we studied the size quantization effects in the channel of a low dimensional MOSFET using a Self-Consistent Quantum Method where Schrodinger-Poisson equations are solved for determining the electron density for 3nm × 3nm and 12nm×12nm 2D channels. The 3nm×3nm channel MOSFET show the peak of the electron density at the middle whereas the 12nmξ12nm channel MOSFET shows the accumulation of the electrons at the oxide/semiconductor interface. The electron density in the channel is obtained using density matrix formalism from the density matrix . A block diagonal Hamiltonian Matrix [H] is constructed for the oxide/channel/oxide 2D structure for the dual gate MOSFET. This structure is discretized and Finite-Difference method is used for constructing the matrix equation. We also show the effect of effective mass on the overall channel electron density distribution. This analysis is very important and gives an understanding of the Physics of the channel electron density for Nano-Scale DevicesItem Effect of size quantization and quantum capacitance on the threshold voltage of a 2D nanoscale dual gate MOSFET(IOP, 2020-09) Sarkar, NiladriThe size quantization effect in the channel of a 2D nanoscale MOSFET is studied using a self-consistent quantum method. Under this, Schrodinger-Poisson equations are solved for determining the electron density for 2D device channels from 3 nm × 3 nm to 100 nm × 100 nm. The lower dimension channels show a peak of the electron density at the middle whereas higher dimension channels show the accumulation of the electrons at the oxide/semiconductor interface. Also, the role of quantum capacitance on the threshold voltages of these nanoscale devices is investigated as a function of channel dimensions and electron effective masses. It is observed that not only the size but the electron effective masses dominate the conductivity of the channel for such nanoscale devices. Here, the channel electron densities are obtained using density matrix formalism. A block diagonal Hamiltonian Matrix [H] is constructed for this oxide/channel/oxide 2D structure and the channel is discretized by using the finite-difference method. This analysis is important for understanding the physics of the size quantization and its effect on the threshold voltage.