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    High stakes chips for India’s semiconductor push
    (Springer Nature, 2024-09) Rao, V. Ramgopal
    In the past decade, India’s start up ecosystem has flourished, giving rise to more than 100 unicorns, or start-up companies valued at more than $1billion USD. None of those were in the semiconductor space. That absence presents an immense opportunity. The stakes in the semiconductor industry are extraordinarily high. These tiny chips are the foundation for critical technologies like artificial intelligence (AI), quantum computing, and renewable energy. Yet, building a thriving semiconductor ecosystem is no easy task. Startups in this space need long gestation periods and capital requirements that dwarf those of other sectors. For context, advanced semiconductor fabrication plants (fabs) demand investments exceeding $10 billion. In a country like India, where such infrastructure is still in its infancy, this represents a daunting challenge. However, India is not starting from scratch. An estimated 20% of the global semiconductor engineering workforce is of Indian origin, an impressive intellectual asset. Despite this, India’s semiconductor startup sector has struggled to generate significant financial returns. By May 2024, India's semiconductor-related exits amounted to a modest half a billion dollars. Israel, with a smaller talent pool, boasts over $50 billion in exits. The difference lies not just in technical expertise but in the ecosystem that nurtures these startups. In the semiconductor sector, innovators claim most profits, while manufacturers get slimmer margins1. What does Israel do differently? It has fostered an environment where technical talent, market awareness, and active corporate ventures come together. Israeli startups aim for global leadership, leveraging their agility and innovation in competitive markets. The Indian semiconductor sector, however, has traditionally focused on servicing multinational corporations rather than creating indigenous intellectual property. This service-driven model has limited our ability to carve out a space in the competitive global market.
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    Fabrication and Characterization of a Silicon Carbide Based Schottky Barrier Diode
    (Springer, 2023-08) Singh, Dheerendra
    In this work, we report the fabrication and characterization of a Schottky diode containing a metal–semiconductor Schottky junction. The metal–semiconductor Schottky contact was formed using nickel (Ni) as the metal and silicon carbide (4H-SiC) as the semiconducting material. The metal–semiconductor Schottky diode array was fabricated on 350-μm-thick 4H-SiC (0001) substrates. The Schottky contact was formed using Ni, and a triple layer of Ti/Pt/Au was used for the ohmic contact. Deposition of Ni-Cr alloy on 4H-SiC was carried out to improve the adhesion at the metal–semiconductor interface. Based on the current–voltage (I–V) characteristics, the device output parameter values for turn-on voltage, forward current at 5 V, reverse saturation current, barrier height (φB) and ideality factor (η) were 1 V, 2.57 mA, 652 nA, 0.935 eV and 1.296, respectively. A band diagram is proposed to explain the charge transport phenomena.
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    A type-II semiconductor (ZnO/CuS heterostructure) for visible light photocatalysis
    (RSC, 2014) Basu, Mrinmoyee
    Type-II semiconductors with p–n heterojunctions have been fabricated by decorating CuS nanostructures on the surface of ZnO nanotubes with the help of a wet-chemical method at low temperature. We are reporting the enhanced visible light photocatalytic efficiency of ZnO/CuS heterostructures. CuO nanostructures were synthesized on the surface of ZnO nanotubes and then the CuO nanostructures were converted to CuS at 80 °C to generate the ZnO/CuS heterostructures. These ZnO/CuS heterostructures efficiently decompose methylene blue upon irradiation of visible light at room temperature. A study of the mechanism suggests that the enhanced photocatalytic activity is due to the formation of ZnO/CuS junctions, which leads to the efficient separation of photoinduced carriers.
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    A type-II semiconductor (ZnO/CuS heterostructure) for visible light photocatalysis
    (RSC, 2014) Basu, Mrinmoyee
    Type-II semiconductors with p–n heterojunctions have been fabricated by decorating CuS nanostructures on the surface of ZnO nanotubes with the help of a wet-chemical method at low temperature. We are reporting the enhanced visible light photocatalytic efficiency of ZnO/CuS heterostructures. CuO nanostructures were synthesized on the surface of ZnO nanotubes and then the CuO nanostructures were converted to CuS at 80 °C to generate the ZnO/CuS heterostructures. These ZnO/CuS heterostructures efficiently decompose methylene blue upon irradiation of visible light at room temperature. A study of the mechanism suggests that the enhanced photocatalytic activity is due to the formation of ZnO/CuS junctions, which leads to the efficient separation of photoinduced carriers.