Organic field effect transistors for explosive and radiation dosimetry applications

dc.contributor.authorRao, V. Ramgopal
dc.date.accessioned2023-11-01T09:32:41Z
dc.date.available2023-11-01T09:32:41Z
dc.date.issued2016-11
dc.description.abstractThis paper presents a brief overview of an Organic field effect transistor (OFET) based sensor applications. It highlights recent progress in the field of gas sensing and ionizing radiation sensing using OFETs. Besides step-by-step improvement of conventional devices, novel materials and novel approaches for OFET based gas and radiation sensing are discussed.en_US
dc.identifier.urihttps://ieeexplore.ieee.org/document/7808602
dc.identifier.urihttp://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12785
dc.language.isoenen_US
dc.publisherIEEEen_US
dc.subjectEEEen_US
dc.subjectOrganic field effect transistors (OFETs)en_US
dc.subjectGas sensingen_US
dc.subjectRadiation sensingen_US
dc.titleOrganic field effect transistors for explosive and radiation dosimetry applicationsen_US
dc.typeArticleen_US

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