Understanding the NBTI Degradation in Halo- Doped Channel p-MOSFETs

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dc.contributor.authorRao, V. Ramgopal
dc.date.accessioned2023-11-06T06:52:40Z
dc.date.available2023-11-06T06:52:40Z
dc.date.issued2004-07
dc.description.abstractThe role of initial interface damage for negative bias temperature instability (NBTI) degradation has been examined for short channel MOSFET devices. In this paper we present a detailed study of the role of initial silicon-oxide interface quality on the NBTI degradation. Hole density and oxide fields are important parameters responsible for NBTI degradation. Our results show that NBTI degradation is independent of initial interface quality.en_US
dc.identifier.urihttps://ieeexplore.ieee.org/document/1345639
dc.identifier.urihttp://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12868
dc.language.isoenen_US
dc.publisherIEEEen_US
dc.subjectEEEen_US
dc.subjectNiobium compoundsen_US
dc.subjectTitanium compoundsen_US
dc.subjectDegradationen_US
dc.subjectMOSFET circuitsen_US
dc.subjectInterface statesen_US
dc.subjectStressen_US
dc.titleUnderstanding the NBTI Degradation in Halo- Doped Channel p-MOSFETsen_US
dc.typeArticleen_US

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