Effect of gate oxide thickness on polycrystalline silicon thin-filmtransistors

Abstract

This work presents the study of the effect of gate oxide thickness on the performance of lightly doped polycrystalline silicon thin-filmtransistors with large grains. It is observed that scaling down of the oxide thickness is an efficient way to reduce the threshold voltage and hence to improve the poly- Si TFT characteristics. A reasonably good fitting between the analytical results and the experimental data support the validity of this model.