Plasma process induced abnormal 1/f noise behavior in deep sub-micron MOSFETs

Simple item page
dc.contributor.authorRao, V. Ramgopal
dc.date.accessioned2023-11-07T10:50:26Z
dc.date.available2023-11-07T10:50:26Z
dc.date.issued1998
dc.description.abstractThe effect of plasma damage on the MOSFET's flicker noise properties is examined in this work. We observe an abnormal noise peak in the 1/f noise spectrum at around 2 kHz which is a characteristic of the plasma damage. The dependence of the noise peak on the plasma induced degradation was studied in virgin n- and p-channel MOSFETs and this peak is shown to correlate well with the amount of damage in the p-MOSFETs.en_US
dc.identifier.urihttps://ieeexplore.ieee.org/document/725590
dc.identifier.urihttp://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12904
dc.language.isoenen_US
dc.publisherIEEEen_US
dc.subjectEEEen_US
dc.subjectPlasma propertiesen_US
dc.subjectVoltageen_US
dc.subjectDegradationen_US
dc.subjectPlasma materials processingen_US
dc.subjectEtchingen_US
dc.subjectNoise figureen_US
dc.titlePlasma process induced abnormal 1/f noise behavior in deep sub-micron MOSFETsen_US
dc.typeArticleen_US

Files

License bundle

Now showing 1 - 1 of 1
No Thumbnail Available
Name:
license.txt
Size:
1.71 KB
Format:
Item-specific license agreed upon to submission
Description:
Download

Collections

Department of Electrical and Electronics Engineering