Fowler–Nordheim Tunnelling Contribution in AlGaN/GaN on Si (111) Schottky Current

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dc.contributor.authorKumar, Rahul
dc.date.accessioned2023-04-03T09:26:06Z
dc.date.available2023-04-03T09:26:06Z
dc.date.issued2016
dc.description.abstractAlGaN/GaN heterojunction with Schottky metal contact can be modelled with two back-to-back diodes. The forward-biased diode between metal and AlGaN barrier acts at the onset of current with positive bias. Fowler– Nordheim tunnelling is mainly responsible for the electron transport at the low positive bias level. Downward energy band bending of AlGaN barrier with further positive voltage reduces the tunnelling probability due to lowering of the barrier height of the first diode, causing a dramatic change in the current.en_US
dc.identifier.urihttps://www.tandfonline.com/doi/abs/10.1080/02564602.2015.1042933?journalCode=titr20
dc.identifier.urihttp://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/10139
dc.language.isoenen_US
dc.publisherTaylor & Francisen_US
dc.subjectEEEen_US
dc.subjectAlGaN/GaN heterostructureen_US
dc.subjectFowler–Nordheimen_US
dc.subjectTunnellingen_US
dc.subjectSchottky Barrieren_US
dc.titleFowler–Nordheim Tunnelling Contribution in AlGaN/GaN on Si (111) Schottky Currenten_US
dc.typeArticleen_US

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