The Planar-Doped-Barrier FET:MOSFET Overcomes Conventional Limitations
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Date
1997-10
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Journal Title
Journal ISSN
Volume Title
Publisher
IEEE
Abstract
Introducing a concept of Electric-Field-Tailoring in vertical grown
MOSFETs significant improvements concerning supply voltage,
current and speed are possible. Based on vertical Silicon MOSFETs
with sub-100nm channel lengths Planar-Doped-BarrierFETs
were fabricated. Investigations on electrical characteristics
and carrier transport show the predicted improvements compared
to classical MOSFETs.
Description
Keywords
EEE, MOSFETs