Electric field tailoring in MBE-grown vertical sub-100 nm MOSFETs

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dc.contributor.authorRao, V. Ramgopal
dc.date.accessioned2023-10-31T09:20:12Z
dc.date.available2023-10-31T09:20:12Z
dc.date.issued1998-05
dc.description.abstractWe introduce the concept of electric-field-tailoring in MBE-grown vertical metal-oxide semiconductor field-effect transistors (MOSFETs) and show that significant improvements in terms of supply voltage, current and speed are achievable in such MOSFETs by employing a planar-doped-barrier MOSFET (PDBFET) concept. Investigation of electrical characteristics and carrier transport in sub-100 nm channel PDBFETs shows the predicted improvements compared with classical MOSFETs.en_US
dc.identifier.urihttps://www.sciencedirect.com/science/article/abs/pii/S004060909800474X
dc.identifier.urihttp://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12766
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.subjectEEEen_US
dc.subjectMOSFETsen_US
dc.subjectElectric fieldsen_US
dc.titleElectric field tailoring in MBE-grown vertical sub-100 nm MOSFETsen_US
dc.typeArticleen_US

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