Hot-Carrier Induced Interface Degradation in Jet Vapor Deposited SiN MNSFETs as Studied by a Novel Charge Pumping Technique

Abstract

Metal-Nitride-Semiconductor f"'En:" with channel lengths down to 100 nm and a novel .leI Vapor f)eposited (JVD) SiN gate dielectric are fabricated and characterized for their hot-carrier reliability. A novel charge pumping technique is employed to characterize the stress induced interface degradation (?f such MN5WETs' in comparison to MOSJ-1n:\, having thermal Si(h gale oxide. Under identical substrate current during stress, MNSFE1's show less inte1jcu:e-state generation and resulting drain current degradation jbr various channel lengths, stress time and supply voltage. The time and vollage dependence of hot-carrier degradation has been found (0 he distinctly d􀁮tferent for MN.)'F'ETs compared (0 conventional Si02 MOSFET'i.