Analysis of Graphene/SiO2/p-Si Schottky Diode by Current–Voltage and Impedance Measurements
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Date
2018-11
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Springer
Abstract
We explore the electrical properties of graphene–silicon dioxide–p–silicon Schottky junction diode using current–voltage characteristics and impedance analysis. Ideality factor, rectification ratio, and series resistance are extracted from the experimental data. A linear response of series resistance of graphene/SiO2/p-Si Schottky diode is observed with respect to change in forward bias voltage from 0 to 2 V.
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Keywords
EEE, Schottky diode, Graphene nanoplatelets (GNP), Impedance analysis, Silicon