Study of Quantum Dot Solar Cell Including CdTe Quantum Dots Embedded in Al0.3 Ga0.7 As/GaAs Quantum Wells

Abstract

Intermediate Band Solar Cells were proposed in 1997 as an alternative to tandem solar cells to achieve high efficiency in a photovoltaic device. It has a proposed theoretical limit of 63.2%, much higher than the 33% of a single-junction solar cell. In this study, we explore the photovoltaic performance of CdTe Quantum Dots embedded in Al0.3Ga0.7As/GaAs Quantum Wells for the first time using SCAPS-1D software. This arrangement leads to the formation of intermediate energy levels due to Quantum Confinement, which has been exploited to form a Hole Injection Layer and increase Quantum Efficiency. Further, a detailed study of the device’s band diagram in both illuminated and illuminated cases is provided, offering crucial insights into its performance and working. The best-optimized device yielded a maximum power conversion efficiency of 31.8%, Quantum Efficiency (QE) of 80% over the visible range, open-circuit voltage VOC of 1.36 and fill factor (F= r) ranging between 77%−85%.