Effect of Vertical and Longitudinal Electric Field on 2DEG of AlGaN/GaN HEMT on Silicon: A Qualitative Reliability Study

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dc.contributor.authorKumar, Rahul
dc.date.accessioned2023-04-03T10:48:21Z
dc.date.available2023-04-03T10:48:21Z
dc.date.issued2013
dc.description.abstractEffect of both vertical and longitudinal electric field on AlGaN/GaN HEMT 2DEG channel is studied under long pulses with different duty cycles at two separate VGS (i.e. at +2 and -2 V). The duty cycles of applied pulses are of 100, 50, 5 and 0.5 %. Separate responses are being observed to confirm different non-ideal reliability issues like scatterings, effects of surface states and trapped electrons. It also raises an optimization scenario between available 2DEG concentration in channel and its various scattering and depletion phenomenon.en_US
dc.identifier.urihttps://link.springer.com/chapter/10.1007/978-3-319-03002-9_19
dc.identifier.urihttp://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/10157
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.subjectEEEen_US
dc.subjectHigh-electron-mobility transistor (HEMT)en_US
dc.subjectAlGaN/GaNen_US
dc.subjectReliabilityen_US
dc.titleEffect of Vertical and Longitudinal Electric Field on 2DEG of AlGaN/GaN HEMT on Silicon: A Qualitative Reliability Studyen_US
dc.typeArticleen_US

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