Drain current model for undoped symmetric double-gate FETs using a velocity saturation model with exponent n=2

Abstract

In this paper we present for the first time a single-equation inversion-charge-based drain current model for SDGFETs based on the drift-diffusion transport mechanism using an exponent n=2 for velocity saturation, that is neither threshold voltage-based nor charge-sheet-based. Because it is not based on any charge sheet models, it automatically models phenomena specific to ultra-thin DGFETs such as volume inversion. We present the model equations and the final results showing analytical versus 2D device simulation results.