Two-step annealing of hot wire chemical vapor deposited a-Si:H films

dc.contributor.author	Roy, Banasri
dc.date.accessioned	2021-10-01T11:16:17Z
dc.date.available	2021-10-01T11:16:17Z
dc.date.issued	2008
dc.description.abstract	A two-step annealing process was used to investigate the effect of dehydrogenation on crystallization and grain growth of low and high hydrogen content hot wire chemical vapor deposited (HWCVD) a-Si:H films. A low temperature pre-annealing followed by a rapid thermal annealing step at 600 °C was carried out. For the high hydrogen content film XRD (111) peak narrowed quite a bit, while opposite effect was observed for the low hydrogen content film. According to the grain sizes as calculated from TEM images, grain sizes of both of the two-step annealed high and low hydrogen content films are smaller than that of the single stage annealed film.	en_US
dc.identifier.uri	https://www.infona.pl/resource/bwmeta1.element.springer-ca160cc6-1625-393b-bb76-0cee597cd0bd
dc.identifier.uri	http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/2386
dc.language.iso	en	en_US
dc.publisher	Springer	en_US
dc.subject	Chemical Engineering	en_US
dc.subject	Chemical vapor	en_US
dc.title	Two-step annealing of hot wire chemical vapor deposited a-Si:H films	en_US
dc.type	Article	en_US

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