Surface energy and stress driven growth of extremely long and high-density ZnO nanowires using a thermal step-oxidation process

Abstract

Formation of highly crystalline zinc oxide (ZnO) nanowires with an extremely high aspect ratio (length = 60 μm, diameter = 50 nm) is routinely achieved by introducing an intermediate step-oxidation method during the thermal oxidation process of thin zinc (Zn) films. High-purity Zn was deposited onto clean glass substrates at room temperature using a vacuum-assisted thermal evaporation technique. Afterwards, the as-deposited Zn layers were thermally oxidized under a closed air ambient condition at different temperatures and durations. Structural, morphological, chemical, optical and electrical properties of these oxide layers were investigated using various surface characterization techniques such as X-ray diffraction (XRD), scanning electron microscopy (SEM), Raman spectroscopy, and X-ray photoemission spectroscopy (XPS). It was noticed that the initial thermal oxidation of Zn films usually starts above 400 °C. Homogeneous and lateral growth of the ZnO layer is usually preferred for oxidation at a lower temperature below 500 °C. One-dimensional (1D) asymmetric growth of ZnO started to dominate thermal oxidation above 600 °C. Highly dense 1D ZnO nanowires were specifically observed after prolonged oxidation at 600 °C for 5 hours, followed by short-step oxidation at 700 °C for 30 minutes. However, direct oxidation of Zn films at 700 °C resulted in ZnO nanorod formation. The formation of ZnO nanowires using step-oxidation is explained in terms of surface free energy and compressive stress-driven Zn adatom kinetics through the grain boundaries of laterally grown ZnO seed layers. This simple thermal oxidation process using intermittent step-oxidation was found to be quite unique and very much useful to routinely grow an array of high-density ZnO nanowires. Moreover, these ZnO nanowires showed very high sensitivity and selectivity towards formaldehyde vapour sensing against few other VOCs.