Theoretical Investigation of Thickness Variation on Ga2O3 MESFET: Depletion to Enhancement Mode Transition

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dc.contributor.authorKumar, Rahul
dc.date.accessioned2024-12-13T10:47:24Z
dc.date.available2024-12-13T10:47:24Z
dc.date.issued2023
dc.description.abstractWe have investigated the DC characteristics of Ga 2 O 3 -based metal semiconductor field effect transistor (MESFET). Different channel thicknesses namely 1000 nm, 500 nm, 250 nm and 100 nm have been employed for simulation. By reducing the channel thickness, depletion mode (D-mode) devices turned into enhancement mode (E-mode) devices. Peculiar exponential output characteristics have been observed in the subthreshold region.en_US
dc.identifier.urihttps://ieeexplore.ieee.org/abstract/document/10127322
dc.identifier.urihttps://dspace.bits-pilani.ac.in/handle/123456789/16622
dc.language.isoenen_US
dc.publisherIEEEen_US
dc.subjectEEEen_US
dc.subjectMESFETen_US
dc.subjectGallium oxide (Ga2O3)en_US
dc.subjectDepletion modeen_US
dc.subjectEnhancement modeen_US
dc.subjectSchottkyen_US
dc.titleTheoretical Investigation of Thickness Variation on Ga2O3 MESFET: Depletion to Enhancement Mode Transitionen_US
dc.typeArticleen_US

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