Low temperature Hot-Wire CVD nitrides for deep sub-micron CMOS technologies

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dc.contributor.authorRao, V. Ramgopal
dc.date.accessioned2023-11-07T09:42:56Z
dc.date.available2023-11-07T09:42:56Z
dc.date.issued2000
dc.description.abstractIn this work we report results on MNS capacitors with the silicon nitride films fabricated by using a novel Hot-Wire CVD technique. The dependence of deposition parameters on the film properties is looked into. Our electrical characterisation results on MNS capacitors show good oxide breakdown fields, and low leakage.en_US
dc.identifier.urihttp://repository.ias.ac.in/79796/
dc.identifier.urihttp://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12899
dc.language.isoenen_US
dc.publisherThe International Society for Optical Engineeringen_US
dc.subjectEEEen_US
dc.subjectHWCVD nitrideen_US
dc.subjectCMOS technologiesen_US
dc.titleLow temperature Hot-Wire CVD nitrides for deep sub-micron CMOS technologiesen_US
dc.typeArticleen_US

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