Complementary Organic Circuits Using Evaporated F16CuPc and Inkjet Printing of PQT

Abstract

Organic complementary inverters and ring oscillators are fabricated using a unique combination of inkjet printing and evaporation of organic semiconductors. p-Type poly (3, 3'''-didodecylquaterthiophene) (PQT) is inkjet printed, after which n-type copper hexadecafluorophthalocyanine (F 16 CuPc) is evaporated and patterned by shadow masking. A solution-processable bilayer gate dielectric with superior gate leakage characteristics and a simplified process stack is implemented. The inverters show a high noise margin, good gain characteristics, and a switching point close to V dd /2. A five-stage ring oscillator is also demonstrated.