Multi-frequency transconductance technique for interface characterization of deep sub-micron SOI–MOSFETs

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dc.contributor.authorRao, V. Ramgopal
dc.date.accessioned2023-10-31T06:41:39Z
dc.date.available2023-10-31T06:41:39Z
dc.date.issued2001-07
dc.description.abstractA multi-frequency transconductance technique for interface characterization of sub-micron SOI–MOSFETs is implemented. This technique is shown to be highly suitable for interface characterization in SOI devices where conventional charge-pumping techniques cannot be applied. Using this multi-frequency technique, sub-micron SOI–MNSFETs with a SiN dielectric deposited by a novel jet-vapor-deposition (JVD) process are characterized. Results are compared with charge pumping results obtained on bulk MNSFETs with identically processed JVD nitrides.en_US
dc.identifier.urihttps://www.sciencedirect.com/science/article/abs/pii/S0026271401000671
dc.identifier.urihttp://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12754
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.subjectEEEen_US
dc.subjectSOI–MOSFETsen_US
dc.subjectJVD nitridesen_US
dc.titleMulti-frequency transconductance technique for interface characterization of deep sub-micron SOI–MOSFETsen_US
dc.typeArticleen_US

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