Carbon Nanotube Field Effect Transistor: Basic Characterization and Effect of High Dielectric Material

Simple item page
dc.contributor.authorMishra, Rashmi Ranjan
dc.date.accessioned2024-02-21T10:04:19Z
dc.date.available2024-02-21T10:04:19Z
dc.date.issued2009-11
dc.description.abstractAs the scaling of Si MOSFET approaches towards its limiting value, new alternatives are coming up to overcome these limitations. Carbon nanotube field effect transistor (CNTFET) is found to be one of the most promising alternatives for bulk Si MOSFET. In this work we have simulated a cylindrical CNTFET. Based on the simulation results both output and transfer characteristic curves are plotted and analyzed. We have also studied the effect of different dielectric materials used as gate insulator.en_US
dc.identifier.urihttps://www.proquest.com/openview/27e262be6aa7cea525b01e32d4f50b76/1?cbl=136092&pq-origsite=gscholar&parentSessionId=gJKETeOej9in0yDpX4PMKw7xdCdKrtOyBrFLjIZkBEU%3D
dc.identifier.urihttps://dspace.bits-pilani.ac.in/xmlui/handle/123456789/14403
dc.language.isoenen_US
dc.publisherIJRTEen_US
dc.subjectPhysicsen_US
dc.subjectNanotubesen_US
dc.subjectTransistorsen_US
dc.subjectMOSFET dimensional scalingen_US
dc.subjectCharacteristic curveen_US
dc.subjectDielectric materialsen_US
dc.subjectSaturation currenten_US
dc.titleCarbon Nanotube Field Effect Transistor: Basic Characterization and Effect of High Dielectric Materialen_US
dc.typeArticleen_US

Files

License bundle

Now showing 1 - 1 of 1
No Thumbnail Available
Name:
license.txt
Size:
1.71 KB
Format:
Item-specific license agreed upon to submission
Description:
Download

Collections

Department of Physics