Transport Properties and Sub-band Modulation of the SWCNT Based Nano-scale Transistors

Abstract

We apply NEGF formalism on a Single Walled Carbon Nano Tube (SWCNT) based transistor under which it is treated as an open quantum system where the Schrodinger equation for the channel is given as (H + Σ)ψ(r) + (S) = Eψ(r). Here, (S) is the source term arising due to the channel/contact hybridization and ‘Σ’ is the self-energy term which is a complex matrix whose real part is related to the corrections in the channel eigenstate energies and imaginary part is related to the broadening of the channel eigenstates. For example, a one-level channel gets hybridized to a Lorentzian density of states under contact.