A study of 100 nm channel length asymmetric channel MOSFET by using charge pumping
| dc.contributor.author | Rao, V. Ramgopal | |
| dc.date.accessioned | 2023-10-31T09:16:44Z | |
| dc.date.available | 2023-10-31T09:16:44Z | |
| dc.date.issued | 1999-09 | |
| dc.description.abstract | Lateral Asymmetric Channel (LAC) MOSFETs with channel lengths down to 0.1 μm have been fabricated and characterized for their electrical performance. Using charge pumping, we show, for the first time, channel VT profiles obtained experimentally, demonstrating realization of asymmetric channel MOSFETs down to 0.1 μm channel lengths. Our detailed experimental characterizations show improved performance for LAC MOSFETs over conventional MOSFETs, in addition to excellent hot-carrier reliability. Based on 2-D device simulation results, we attribute the improved hot-carrier reliability in LAC MOSFETs to the reduced peak lateral electric field in the channel. | en_US |
| dc.identifier.uri | https://www.sciencedirect.com/science/article/abs/pii/S016793179900369X | |
| dc.identifier.uri | http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12765 | |
| dc.language.iso | en | en_US |
| dc.publisher | Elsevier | en_US |
| dc.subject | EEE | en_US |
| dc.subject | Charge pumping | en_US |
| dc.subject | MOSFETs | en_US |
| dc.title | A study of 100 nm channel length asymmetric channel MOSFET by using charge pumping | en_US |
| dc.type | Article | en_US |
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