Application of Mono Layered Graphene Field Effect Transistors for Gamma Radiation Detection

Abstract

In this work, we report the application of graphene field effect transistors (GFETs) as a gamma radiation sensor. The GFETs were irradiated at room temperature by 60 Co gamma radiation source for 10 kGy and 20 kGy gamma dose. The Electrical measurements and Raman spectroscopy showed that gamma radiation induced p-doping in graphene. Large positive shifts in Dirac point and significant degradation in electron mobility were observed post-gamma irradiation. Thus modulation in transport properties of GFETs was utilized here to measure the absorbed gamma radiations. We propose, a GFET based radiation detector with high sensitivity of + 113 V for 20 kGy gamma dose operating in ambient condition.