Analysis of Floating Body Effects in Thin Film Conventional and Single Pocket SOI MOSFETs using the GIDL Current Technique

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dc.contributor.authorRao, V. Ramgopal
dc.date.accessioned2023-10-31T06:14:40Z
dc.date.available2023-10-31T06:14:40Z
dc.date.issued2001-07
dc.description.abstractIn this paper, we present an analysis of floating body effects in lateral asymmetric channel (LAC) and conventional homogeneously doped channel (uniform) SOI MOSFETs using a novel gate-induced-drain-leakage (GIDL) current technique. The parasitic bipolar current gain /spl beta/ has been experimentally measured for LAC and uniform SOI MOSFETs using the GIDL current technique. The lower parasitic bipolar current gain observed in LAC SOI MOSFETs is explained with the help of 2D device simulations.en_US
dc.identifier.urihttps://ieeexplore.ieee.org/document/941497
dc.identifier.urihttp://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12747
dc.language.isoenen_US
dc.publisherIEEEen_US
dc.subjectEEEen_US
dc.subjectTransistorsen_US
dc.subjectMOSFETsen_US
dc.subjectLos Angeles Councilen_US
dc.subjectTunnelingen_US
dc.subjectLeakage currenten_US
dc.subjectCurrent measurementen_US
dc.subjectLow voltageen_US
dc.subjectCMOS technologyen_US
dc.titleAnalysis of Floating Body Effects in Thin Film Conventional and Single Pocket SOI MOSFETs using the GIDL Current Techniqueen_US
dc.typeArticleen_US

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