TiO2-GO Field Effect Transistors for Amplified Ethanol Sensing

dc.contributor.authorHazra, Arnab
dc.date.accessioned2024-12-02T06:09:15Z
dc.date.available2024-12-02T06:09:15Z
dc.date.issued2020
dc.description.abstractIn this work we have proposed p-TiO 2 -GO nanocomposite field effect transistor based ethanol sensor. p-type TiO 2 nanoparticles was prepared by sol-gel method and mixed with 2 wt% aquas solution of graphene oxide (GO) and sonicated for 30 min. The nanocomposite was prepared in combination of 5 vol% p-TiO 2 nanoparticles with 95 vol% GO. The morphological and structural characterizations of developed nancomposite were carried out with field emission scanning electron microscopy (FESEM) and Raman spectroscopy techniques, respectively. The p-TiO 2 -GO field effect transistor (FET) sensor showed a response magnitude of 6% in terminal structure when V GS =0 and 41% as in three terminal structure when V GS =0.65 V in the exposure of 100 ppm ethanol at 100°C. The p-TiO 2 -GO FET showed maximum ~7 times amplification in sensitivity due to application of positive gate voltage.en_US
dc.identifier.urihttps://ieeexplore.ieee.org/abstract/document/9216457
dc.identifier.urihttp://dspace.bits-pilani.ac.in:8080/jspui/handle/123456789/16552
dc.language.isoenen_US
dc.publisherIEEEen_US
dc.subjectEEEen_US
dc.subjectTiO2-GO hybriden_US
dc.subjectEthanol sensingen_US
dc.subjectAmplified sensitivityen_US
dc.titleTiO2-GO Field Effect Transistors for Amplified Ethanol Sensingen_US
dc.typeArticleen_US

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