Charge trapping behaviour in deposited and grown thin metal-oxide-semiconductor gate dielectrics

dc.contributor.author	Rao, V. Ramgopal
dc.date.accessioned	2023-10-31T10:51:07Z
dc.date.available	2023-10-31T10:51:07Z
dc.date.issued	1997-03
dc.description.abstract	In this study we compared the charge trapping characteristics of low pressure chemical vapour deposited (LPCVD) oxide and remote plasma enhanced chemical vapour deposited (RPECVD) oxide with two types of thermally grown oxide, namely high-pressure grown oxide (HIPOX) and the standard thermal dry oxide. The deposited oxides show enhanced Fowler-Nordheim tunnelling currents compared with the thermal oxides. Our results on charge trapping characteristics under high-field stressing and irradiation show that the deposited oxides exhibit very large electron trapping compared with the grown oxides and that these electron traps in the deposited oxides reside close to the Si-SiO2 interface and hence can affect the device reliability.	en_US
dc.identifier.uri	https://www.sciencedirect.com/science/article/abs/pii/S0040609096093327
dc.identifier.uri	http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12770
dc.language.iso	en	en_US
dc.publisher	Elsevier	en_US
dc.subject	EEE	en_US
dc.subject	Metal-oxide-semiconductor (MOS)	en_US
dc.subject	Dielectrics	en_US
dc.title	Charge trapping behaviour in deposited and grown thin metal-oxide-semiconductor gate dielectrics	en_US
dc.type	Article	en_US

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