Porphyrin induced changes in charge transport of graphene FET
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Date
2016
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Publisher
IEEE
Abstract
The transport properties of back-gated graphene field effect transistors (GFETs) can be tuned via chemical doping. In this study, we report alteration of charge transport properties of GFET via 5-(4-hydroxyphenyl)-10,15,20-tri-(p-tolyl) zinc(II) porphyrin (Zn(II)-TTPOH) and its free base counterpart. We propose that, the porphyrin induces p-type doping in graphene.
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Keywords
EEE, Graphene, Logic gates, Sensors, Two dimensional displays, Chemicals, Optical device fabrication