On the differences between 3D filamentation and failure of N & P type drain extended MOS devices under ESD condition

Abstract

We present differences in the ESD failure mechanisms, intrinsic behavior and various phases of filamentation of STI type DeNMOS and DePMOS devices using detailed 3D TCAD simulations, TLP and TIM experiments. The impact of localized base-push-out, power dissipation because of space charge build-up, regenerative bipolar triggering and various events during the current filamentation are compared. Measurements show that the absence of base push out in DePMOS device leads to ∼2.5X higher IT2 as compared to DeNMOS.