Mux Based Ultra-Low-Power Ternary Adders and Multiplier implemented with CNFET and 45 nm MOSFETs

dc.contributor.authorVidhyadharan, Sanjay
dc.date.accessioned2023-04-06T09:19:22Z
dc.date.available2023-04-06T09:19:22Z
dc.date.issued2021-04
dc.description.abstractThis paper presents improved multiplexer-based ultra-low-power ternary Half Adder (HA), ternary Full Adder (FA), and ternary 1-bit multiplier designs. The proposed circuits consume 61–91% lesser power and can be implemented with 10–40% lesser number of transistors, as compared to the other corresponding circuits available in the literature. The reduction in power and transistor count has been achieved through improved multiplexer designs and judicious use of pass transistor logic. CNFETs have low gate capacitance and hence are ideal devices for ultra-low-power VLSI applications; however, CMOS technology is presently the most preferred technology, because of the easy and low-cost fabrication option made available by the well-established CMOS fabrication labs. Keeping this in view, the proposed mux-based ternary half adder has been designed with both 45 nm MOSFETs and CNFETs. The performance of the proposed HA design has been benchmarked with other CNFET HA reported in the literature. The proposed mux-based CNFET ternary HA, FA and 1-bit multiplier have 10–30% lesser propagation delays than the other designs available in the literature. The reduction in the Power Delay Product (PDP) is 85–99% in the proposed mux-based CNFET ternary circuits as compared to the other benchmarked designs.en_US
dc.identifier.urihttps://www.tandfonline.com/doi/full/10.1080/00207217.2021.1908616
dc.identifier.urihttp://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/10211
dc.language.isoenen_US
dc.publisherTaylor & Francisen_US
dc.subjectEEEen_US
dc.subjectTernary half adderen_US
dc.subject45 nm CMOS technologyen_US
dc.subjectCarbon Nanotube Field-Effect Transistors (CNFETs)en_US
dc.subjectMux-based ternary circuit designen_US
dc.titleMux Based Ultra-Low-Power Ternary Adders and Multiplier implemented with CNFET and 45 nm MOSFETsen_US
dc.typeArticleen_US

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