Effect of Inversion Layer Thickness on the Activation Energy and Turn-On Characteristics of Polysilicon Thin-Film Transistors

Abstract

The influence of inversion layer thickness on the activation energy and turn-on characteristics of a polycrystalline silicon thin-film transistor (poly-Si TFT) have been investigated theoretically by developing an analytical model. It is observed that activation energy decreases as the gate bias increases and is larger for a larger poly-Si inversion layer thickness. It is also observed that effective carrier mobility and drain current increase rapidly with the increase in gate voltage for all values of inversion layer thickness and are larger for lower inversion layer thickness. The computed results are in reasonable agreement with the experimental observations.