Performance enhancement of p-type organic thin film transistors using zinc oxide nanostructures

Abstract

This paper reports the performance enhancement of nanocomposite thin film transistors fabricated using ZnO dispersed in p-type polymer, poly 3-hexylthiophene (P3HT). The ZnO nanostructures considered here are nanorods (300–500 nm), that were deposited in the high temperature zone during vapor phase deposition involving carbothermal reduction of solid zinc precursor. Organic Thin Film Transistors (OTFTs) based on the dispersion of these ZnO nanostructures in the p-type organic semiconductor, P3HT, show a mobility enhancement by 10 times for the organic–inorganic composite (~ 4 × 10-3 cm2/V s) compared to its pristine state (~ 4 × 10-4 cm2/V s). The results presented here show a great promise for the performance enhancement of p-type solution processable FETs.