Reliability studies on sub 100 nm SOI-MNSFETs

Abstract

SOI MNSFETs with channel lengths down to 100 nm and having a Jet Vapor Deposited (JVD) silicon nitride (Si/sub 3/N/sub 4/) gate dielectric are fabricated and characterized. The JVD MNSFETs show comparable performance in comparison to conventional SiO/sub 2/ SOI-MOSFETs, in terms of low gate leakage, Si/sub 3/N/sub 4//Si interface quality and I/sub on//I/sub off/ ratio. In addition, the MNSFETs show better hot carrier reliability compared to conventional MOSFETs. Our results explore the worthiness of JVD Si/sub 3/N/sub 4/ as gate dielectric for future low power ULSI applications.