Grain boundary engineering of La0.7 Sr0.3 MnO3 films on silicon substrate: Scanning Tunneling Microscopy-Spectroscopy study

Abstract

We employed a Scanning Tunnelling Microscope (STM) to study the surface topography and spatially resolved local electronic properties like local density of states (LDOS) of nanostructured films of La0.7 Sr0.3 MnO3 (LSMO). The nanostructured thin films of LSMO on silicon substrate were prepared using Pulsed Laser Deposition (PLD) technique. The deposition conditions were tuned to yield two different morphologies; one with uniform columnar closely packed islands and other with larger grain distribution in random fashion. The Scanning Tunnelling Spectroscopy (STS) revealed the extent of variation of density of states (DOS) near the Fermi level. From the spectroscopic features obtained we found the occurrence of phase separation between conducting and semiconducting domains and its possible correlation with the properties of the system. Semiconducting nature was observed at the grain boundaries, which could be extremely promising in futuristic nano-devices.