Study of dephasing mechanisms on the potential profile of a nanowire FET

Abstract

The objective of this work is to study the dephasing mechanisms in a channel of a nanowire FET. A self-consistent Non-Equilibrium Green's function method is applied to model the channel current dephasing. The potential profile of the channel is obtained by varying the degree of phase and momentum relaxation independently. Studies are performed by invoking both phase and momentum relaxation mechanisms in the FET channel current. The dephasing strength is varied from 0.0003 eV2 to 0.3 eV2. The potential profile across the channel shows a linear behavior under very high value of dephasing strength. Also, the shape of the output characteristics of the nanowire FET gets changed due to dephasing mechanisms.