Investigation into gate dielectric material using different optimization techniques in carbon nanotube field effect transistors

Abstract

This paper presents an analysis of gate dielectric materials using different optimization techniques for carbon nanotube field effect transistors. The selection of the best gate dielectric is done using multi-criteria decision-making methods, i.e. Ashby's, TOPSIS (technique for order preference by similarity to ideal solution) and VIKOR (VlseKriterijumska Optimizacija I Kompromisno Resenje in Serbian). The selection criteria for the best dielectric material are based on various material indices which include relative dielectric constant (εr), energy band gap (Eg), conduction band offset and coefficient of thermal expansion. This analysis concludes that lanthanum oxide (La2O3) is the most promising dielectric material, followed by HfO2. All these material selection methodologies converge on the same results. This result is compared with the experimental findings, and the close match between analytical and experimental results confirms the validity of this study.