Development of GaN HEMTs based biosensor

Abstract

In this paper, we report on the development of GaN HEMTs for sensing/biosensing applications. Various process steps are optimized at each stages for the development of device. Device shows the 0.5 A/mm drain current, 160 ms/mm transconductance and −4.2 V pinch of voltage for 50 µm Lsd. Devices are packaged for the detection of salt and BPA. Various molar solutions of salt are tested on gateless devices and surprisingly, it is able to detect even the femto molar level of salt. As endocrine disruptors, BPA (Bisphenol A) is tested on gated devices which shows change of about 760 µA in drain current.