Selection of Optimum Device Size and Trans-Conductance Ratio for High Speed Digital CMOS Inverter Design for a Given Fanout Load
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Date
2009
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Publisher
IEEE
Abstract
The PMOS/NMOS width ratio (ß) and W/L ratio of NMOS device is an important ratio in the design of digital logic cells using conventional CMOS logic design style. In this paper we propose a simulation-based method applied to CMOS inverter to accurately estimate an optimum W/L ratio of NMOS device and PMOS/NMOS width ratio when fanout loading of 1, 4 and 8 cells of similar type are present. The appropriate selection of W/L ratio of NMOS device and PMOS/NMOS width ratio makes the digital design faster and reduces the power consumption.
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Keywords
EEE, Inverters, MOS devices, CMOS logic circuits, Logic design, Logic devices, Logic gates, Circuit noise, CMOS technology