High-performance self-biased Cu/SiC/Si photo-sensor with swift response for NIR/Vis photodetection

Abstract

Silicon Carbide (SiC) shows great potential for use in high temperatures and harsh environments due to its promising physical properties. This report introduces a novel double depletion functional heterointerface comprising a multilayer structure of Cu/SiC/Si. High-quality nanocrystalline SiC thin films are fabricated on p-type Silicon (Si) by RF magnetron sputtering at a relatively low temperature of 900 °C as compared to conventional methods. A multilayer photo-sensor device, comprising Cu/SiC/Si layers, is fabricated through the thermal evaporation of Cu metal using a shadow mask. The device exhibits good photo-response at both 750 nm and 440 nm wavelengths. Both the junctions Cu/SiC and SiC/Si play role in generating electron-hole pairs along the depth of the device. The device exhibits a very high responsivity of 1.26 A/W and a rapid response of 94/137 ms at a wavelength of 750 nm at self-bias conditions. It also demonstrates a high responsivity of 0.46 A/W and a very fast response time of 66.8/66.4 ms for 440 nm wavelength. Owing to its impressive performance, this device distinguishes itself as a superior choice among state-of-the-art SiC-based photodetectors. Its significance lies in the robust stability of the SiC/Si junction in high-temperature settings, surpassing low bandgap materials for NIR/vis photodetectors.