Suppression of Parasitic BJT Action in Single Pocket Thin Film Deep Sub-Micron SOI MOSFETs

Simple item page
dc.contributor.authorRao, V. Ramgopal
dc.date.accessioned2023-11-06T10:17:09Z
dc.date.available2023-11-06T10:17:09Z
dc.date.issued2001
dc.description.abstractA study of parasitic bipolar junction transistor effects in single pocket thin film siliconon-insulators (SOI) nMOSFETs has been carried out. Characterization and simulation results show that parasitic bipolar junction transistor action is reduced in single pocket SOI MOSFETs in comparison to homogeneously doped conventional SOI MOSFETs. A novel Gate-Induced-Drain-Leakage (GIDL) current technique was used to characterize the SOI MOSFETs. 2 - D simulations were carried out to analyze the reduced parasitic bipolar junction effect in single pocket thin film SOI MOSFETs.en_US
dc.identifier.urihttps://link.springer.com/article/10.1557/PROC-716-B1.1
dc.identifier.urihttp://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12877
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.subjectEEEen_US
dc.subjectGate-Induced-Drain-Leakage (GIDL)en_US
dc.subjectMOSFETsen_US
dc.titleSuppression of Parasitic BJT Action in Single Pocket Thin Film Deep Sub-Micron SOI MOSFETsen_US
dc.typeArticleen_US

Files

License bundle

Now showing 1 - 1 of 1
No Thumbnail Available
Name:
license.txt
Size:
1.71 KB
Format:
Item-specific license agreed upon to submission
Description:
Download

Collections

Department of Electrical and Electronics Engineering