A novel approach for the growth of InGaN quantum dots

Abstract

A novel two-step growth method for creating InGaN quantum dots (QDs) was developed by using a combination of an Inx Ga1–x N nucleation layer with a platelet structure and an Iny Ga1–y N formation layer with an indium content lower than that of the Inx Ga1–x N nucleation layer. The realized QDs were investigated by micro-photoluminescence measurements. We observed sharp emission lines at 4 K with a spectral width down to the spectral resolution limit of the experimental setup of 0.17 meV. This growth concept is discussed in comparison with conventional growth method