A Solution Toward the OFF-State Degradation in Drain-Extended MOS Device
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Date
2010-12
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Publisher
IEEE
Abstract
We investigated the surface band-to-band tunnelling (BTBT) current under the off-state condition in drain-extended MOS (DeMOS) devices. We found significant gate-induced drain leakage current due to surface BTBT, which was also reported earlier as the dominant cause of early time-dependent dielectric breakdown and device failure. Furthermore, a layout solution for the existing DeMOS device is proposed in order to mitigate the surface BTBT current and the associated gate oxide reliability issues, without sacrificing the mixed-signal performance of the device.
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Keywords
EEE, Band-to-band tunnelling (BTBT), Drain extended, Drain-extended MOSFET (DeMOS), Time-dependent dielectric breakdown (TDDB)