Vapor Phase Self-Assembled Monolayers for CMOS BEOL Barrier Layers

Abstract

As the Back - End - of - Line (BEOL) Interconnects are scaling down to nanometer regime with multiple levels of metallization, need for ultra-thin diffusion barrier layers arise. Self assembled monolayer (SAM) is an ideal solution to satisfy the requirement of an ultra-thin barrier layer to avoid Copper diffusion. However, wet chemical processes are preferably avoided in Complimentary - Metal - Oxide - Semiconductor (CMOS) fabrication process. Accordingly, a novel technique to form SAM of Zinc (||) tetraphenyl hydroxy porphyrin (ZnTPPOH) in vapor phase on Inter - Layer Dielectric (ILD) materials is developed in present work to suit the industry process flow and be integreable in CMOS fabrication.