Mixedmode circuit simulation of silicon and germanium nanowire MOSFETs - A comparative study

Abstract

Nanowire MOSFETs have been recognized as one of the possible choices to continue the scaling of CMOS beyond conventional scaling limits. In present study we study various aspects of device characteristics and Mixedmode circuit behavior of Silicon and Germanium Nanowire MOSFETs. The various parameters determining the behavior of device in the analog/digital circuits is studied and compared for Nanowire MOSFET with Si and Ge as channel material. Important parameters such as transconductance, output conductance, Ion/Ioff ratio and short channel parameters have been extracted and compared for Silicon and Germanium. The Mixed mode circuit simulation has been done for Inverter (VTC and transient analysis) and 3 stage Ring Oscillator (transient analysis). Results of these simulations give insights into the in-circuit behavior of these future generation devices.