Determining ionizing radiation using sensors based on organic semiconducting material

dc.contributor.authorRao, V. Ramgopal
dc.date.accessioned2023-10-28T04:40:15Z
dc.date.available2023-10-28T04:40:15Z
dc.date.issued2009-03
dc.description.abstractThe use of organic semiconducting material sensors as total dose radiation detectors is proposed, wherein the change in conductivity of an organic material is measured as a function of ionizing radiation dose. The simplest sensor is a resistor made using organic semiconductor. Furthermore, for achieving higher sensitivity, organic field effect transistor (OFET) is used as a sensor. A solution processed organic semiconductor resistor and an OFET were fabricated using poly 3-hexylthiophene (P3HT), a p-type organic semiconductor material. The devices are exposed to Cobalt-60 radiation for different total dose values. The changes in electrical characteristics indicate the potential of these devices as radiation sensors.en_US
dc.identifier.urihttps://pubs.aip.org/aip/apl/article/94/12/123304/151860/Determining-ionizing-radiation-using-sensors-based
dc.identifier.urihttp://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12698
dc.language.isoenen_US
dc.publisherAIPen_US
dc.subjectEEEen_US
dc.subjectIonizing radiationen_US
dc.subjectSensorsen_US
dc.subjectOrganic field-effect transistor (OFET)en_US
dc.titleDetermining ionizing radiation using sensors based on organic semiconducting materialen_US
dc.typeArticleen_US

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