Device-circuit co-design for high performance level shifter by limiting quasi-saturation effects in advanced DeMOS transistors
| dc.contributor.author | Rao, V. Ramgopal | |
| dc.date.accessioned | 2023-11-01T10:48:35Z | |
| dc.date.available | 2023-11-01T10:48:35Z | |
| dc.date.issued | 2016 | |
| dc.description.abstract | This paper presents a device-circuit co-design methodology for a DeMOS 5V GHz-speed high voltage level shifter. The limiting quasi-saturation effect is addressed by a codesign methodology. The co-design methodology is applied to the STI-DeMOS in a calibrated setup using experimental data. As a result, a 15% improvement in the speed is achieved for a high-performance level shifter circuit. | en_US |
| dc.identifier.uri | https://ieeexplore.ieee.org/document/7589264 | |
| dc.identifier.uri | http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12794 | |
| dc.language.iso | en | en_US |
| dc.publisher | IEEE | en_US |
| dc.subject | EEE | en_US |
| dc.subject | Performance evaluation | en_US |
| dc.subject | Doping | en_US |
| dc.subject | Delays | en_US |
| dc.subject | Transistors | en_US |
| dc.subject | Optimization | en_US |
| dc.title | Device-circuit co-design for high performance level shifter by limiting quasi-saturation effects in advanced DeMOS transistors | en_US |
| dc.type | Article | en_US |
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