Hybrid Fabrication of Highly Rectifying p - n Homojunction Based on Nanostructured TiO2

Abstract

Present report concerns fabrication of nanostructured TiO 2 -based p-n homojunction, by the hybrid technique involving deposition of sol-gel grown not intentionally doped p-type TiO 2 nanoparticle layer over the electrochemically grown aligned, n-type TiO 2 nanotube array. The Au/p-TiO 2 /n-TiO 2 nanotube/Ti device was found to offer the ideality factor and the cut-in voltage of ~4 and ~1.2 V, respectively, in the temperature range of 30°C-80°C. The structural advantages of TiO 2 nanotubes, owing to the large junction area, eventually offered attractive rectifying behavior (~10 3 orders) of the fabricated junction.