Performance and Hot-Carrier Reliability of 100 nm Channel Length Jet Vapor Deposited Si3N4 MNSFETs

Abstract

Metal–nitride–semiconductor FETs (MNSFETs) having channel lengths down to 100 nm and a novel jet vapor deposited (JVD) Si3N4 gate dielectric have been fabricated and characterized. When compared with MOSFETs having a thermal SiO2 gate insulator, the MNSFETs show a comparable drain current drive, transconductance, subthreshold slope and pre-stress interface quality. A novel charge pumping technique is employed to characterize the hot-carrier induced interface-trap generation in MNSFETs and MOSFETs. Under identical substrate current during stress, MNSFETs show less interface-state generation and drain current degradation, for various channel lengths, stress times and supply voltages, despite the fact that the Si-Si3N4 barrier (2.1 eV) is lower than the Si-SiO2 barrier (3.1 eV). The time and voltage dependence of hot-carrier degradation has been found to be distinctly different for MNSFETs compared to SiO2 MOSFETs.